Job Description

We are seeking a highly motivated and skilled Research Fellow to join our team on a project focused on atomic layer etching (ALE) for achieving highly selective and anisotropic etching of silicon and various dielectric materials. The project aims to enable precise material engineering critical for advanced device integration.

Job Description
•    Develop and optimize ALE processes with high selectivity over silicon and a range of dielectric layers.
•    Characterize etched surfaces using techniques such as ellipsometry, XPS, AFM, and SEM.
•    Collaborate with cross-disciplinary teams and stakeholders.
•    Document and present findings in internal reports and external publications.

Qualifications

Qualifications
•    PhD in Electrical Engineering, Materials Science, Applied Physics, or a related field.
•    Hands-on experience with ALE or atomic layer processing (ALD/ALE), plasma etching, or dry etch process development is preferred.
•    Familiarity with cleanroom environment and advanced characterization techniques.
•    Strong analytical and problem-solving skills.
•    Ability to work independently and in a collaborative team environment.

Preferred Qualifications:
•    Prior experience with toolsets such as Oxford Instruments, Lam Research, or Plasma-Therm etchers.
•    Experience with ALE chemistries involving fluorocarbon, Cl₂, or SF₆ plasma and thermal steps.
•    ls Open to Fixed Term Contract.

More Information

Location: Kent Ridge Campus

Organization: College of Design and Engineering

Department : Electrical and Computer Engineering

Employee Referral Eligible: No

Job requisition ID : 29040