Job Description

The job scope is on the design and fabrication of gallium-nitride based photodetectors for deep UV application, and to obtain high responsivity ratio for precision sensing.  Background knowledge on the gallium nitride devices, its fabrication processes and photo-sensing properties are necessary.  The candidate is expected to be familiar with cleanroom tools for hands-on device fabrication.  Therefore, experiences on device fabrication, epsecially gallium nitride, is necessary.  The research is supported by the MoE grant and deliverables on photosensor prototypes and their performance KPIs are necessary.

Qualifications

(1) Holding a PhD degree in the semiconductor field for less than 2 years. 
(2) Knowledge in gallium nitride device fabrication is needed with prior experiences in cleanroom work on tools, such as laser writer, RIE/ICP, CVD, E-beam evaporator, RTA, etc.
(3) Experiences in laboratory work on measurement, knowledge of using Keysight equipment is preferred.
(4) Knowledge in UV photodetector is an advantage.

More Information

Location: Kent Ridge Campus

Organization: College of Design and Engineering

Department : Electrical and Computer Engineering

Employee Referral Eligible: No

Job requisition ID : 31855